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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
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Sapphire Wafers from China Suppliers & Factory | 50.8mm to 200mm, C/R/M/A Orientation, High Quality

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Product Introduction:

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Our premium sapphire wafers, manufactured in China, are available in diameters ranging from 50.8mm (2) to 200mm (8) and thicknesses from 430μm to 1300μm, tailored to meet your specific needs. As a leading supplier, we offer these wafers in C, R, M, and A crystal orientations, with options for double-side or single-side polished surfaces. Our wafers boast exceptional surface quality with an Ra value of ≤0.3nm, minimal warp of ≤10μm, and tight TTV control of ≤3μm, making them ideal substrates for a variety of optoelectronic and optical applications. Choose our factory for reliable and high-quality sapphire wafers that enhance your projects.

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    Product Detail

    Applications

    • LED substrates (particularly C-plane orientation)

    • Optical windows and lenses for high-durability applications

    • Substrates for GaN epitaxial growth

    • Semiconductor and MEMS device carriers requiring high mechanical and chemical stability

    Parameter Specifications

    DIAMETER 50.8 ± 0.1MM 100 ± 0.1MM 150 ± 0.1MM 200 ± 0.1MM
    Thickness 430 ± 25μm 650 ± 25μm 1300 ± 25μm 1300 ± 25μm
    Ra ≤0.3nm ≤0.3nm ≤0.3nm ≤0.3nm
    Warp ≤10μm ≤10μm ≤10μm ≤10μm
    TTV ≤3μm ≤3μm ≤3μm ≤3μm
    Crystal Orientation C Side / R Side / M Side / A Side
    Surface Double Side Polished / Single Side Polished
    Edge 45° chamfer

    Frequently Asked Questions

    What crystal orientations are available for these sapphire substrates?

    We offer a variety of crystal orientations including C Side, R Side, M Side, and A Side configurations to match your specific epitaxial growth and optical requirements.

    What is the surface roughness (Ra) of the polished sapphire wafers?

    The surface roughness (Ra) is tightly controlled and specified at ≤0.3 nm, providing an ultra-smooth surface suitable for high-quality GaN epitaxial growth and semiconductor applications.

    Can these substrates be customized with single or double-side polishing?

    Yes, we provide flexible finishing options. The sapphire substrates can be ordered as either Double Side Polished (DSP) or Single Side Polished (SSP) depending on your design specifications.

    What are the standard diameters and thicknesses available?

    We supply standard diameters of 50.8 mm (thickness 430 ± 25μm), 100 mm (thickness 650 ± 25μm), 150 mm (thickness 1300 ± 25μm), and 200 mm (thickness 1300 ± 25μm).

    How do you ensure the flatness and quality of the wafers?

    Our wafers undergo strict quality control with Warp tolerances kept at ≤10μm and Total Thickness Variation (TTV) kept at ≤3μm, ensuring high mechanical stability and performance integrity.

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