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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
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Sapphire Wafers from China - 50.8mm to 200mm, C/R/M/A Orientation, High-Quality Suppliers & Factory Options

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Product Introduction:

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Our premium sapphire wafers, manufactured in China, are available in a range of diameters from 50.8mm (2) to 200mm (8), with thicknesses varying from 430μm to 1300μm depending on the size. As a leading supplier and factory of sapphire wafers, we offer products in various crystal orientations including C, R, M, and A, designed with either double-side or single-side polished surfaces. These wafers boast exceptional surface quality (Ra ≤0.3nm), minimal warp (≤10μm), and tight TTV control (≤3μm), ensuring they serve as reliable substrates for diverse optoelectronic and optical applications.

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    Product Detail

    Applications

    • LED substrates (particularly C-plane orientation)
    • Optical windows and lenses for high-durability applications
    • Substrates for GaN epitaxial growth
    • Semiconductor and MEMS device carriers requiring high mechanical and chemical stability

    Parameter Specifications

    Diameter 50.8 ± 0.1 mm 100 ± 0.1 mm 150 ± 0.1 mm 200 ± 0.1 mm
    Thickness 430 ± 25 μm 650 ± 25 μm 1300 ± 25 μm 1300 ± 25 μm
    Ra ≤0.3 nm ≤0.3 nm ≤0.3 nm ≤0.3 nm
    Warp ≤10 μm ≤10 μm ≤10 μm ≤10 μm
    TTV ≤3 μm ≤3 μm ≤3 μm ≤3 μm
    Crystal Orientation C Side / R Side / M Side / A Side
    Surface Double Side Polished / Single Side Polished
    Edge 45° chamfer

    Frequently Asked Questions (FAQ)

    What are the primary applications for these substrates?
    These substrates are widely used for LED substrates (especially C-plane orientation), optical windows and lenses in high-durability applications, templates for GaN epitaxial growth, as well as carriers for semiconductor and MEMS devices that demand outstanding mechanical and chemical stability.
    What crystal orientations and surface finishes do you supply?
    We offer C Side, R Side, M Side, and A Side crystal orientations. The surfaces can be customized with either Double Side Polished (DSP) or Single Side Polished (SSP) finishes.
    What are the standard dimensions and thickness tolerances?
    We provide four standard diameters: 50.8 ± 0.1 mm (thickness: 430 ± 25 μm), 100 ± 0.1 mm (thickness: 650 ± 25 μm), 150 ± 0.1 mm (thickness: 1300 ± 25 μm), and 200 ± 0.1 mm (thickness: 1300 ± 25 μm).
    What are the specifications for surface roughness (Ra) and flatness?
    Our substrates feature an ultra-smooth surface roughness (Ra) of ≤0.3 nm. The Warp is controlled to ≤10 μm, and the Total Thickness Variation (TTV) is kept to ≤3 μm across all configurations.
    How are the edges of the substrates finished?
    Every substrate is processed with a precision 45° chamfer edge design to minimize chipping and improve mechanical handling safety during processing.

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