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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
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Sapphire Wafers 50.8mm to 200mm - China Suppliers and Factory, C/R/M/A Orientation, DSP/SSP Available

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Product Introduction:

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Discover our high-quality sapphire wafers, manufactured in our state-of-the-art factory in China. Available in diameters ranging from 50.8mm (2) to 200mm (8), these wafers come with varying thicknesses from 430μm to 1300μm, tailored to meet your specific needs. We offer sapphire wafers in C, R, M, and A crystal orientations, featuring either double-side or single-side polished surfaces. With exceptional surface quality (Ra ≤ 0.3nm), low warp (≤ 10μm), and tight TTV control (≤ 3μm), our products are the ideal choice for optoelectronic and optical applications. Trust the leading suppliers in the industry for your sapphire wafer requirements.

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    Product Detail

    Applications

    • LED substrates (particularly C-plane orientation)

    • Optical windows and lenses for high-durability applications

    • Substrates for GaN epitaxial growth

    • Semiconductor and MEMS device carriers requiring high mechanical and chemical stability

    Parameter Specifications

    DIAMETER 50.8 ± 0.1MM 100 ± 0.1MM 150 ± 0.1MM 200 ± 0.1MM
    Thickness 430 ± 25μm 650 ± 25μm 1300 ± 25μm 1300 ± 25μm
    Ra ≤0.3nm ≤0.3nm ≤0.3nm ≤0.3nm
    Warp ≤10μm ≤10μm ≤10μm ≤10μm
    TTV ≤3μm ≤3μm ≤3μm ≤3μm
    Crystal Orientation C Side / R Side / M Side / A Side
    Surface Double Side Polished / Single Side Polished
    Edge 45° chamfer

    Frequently Asked Questions

    What are the main applications of these sapphire substrates?

    They are primarily used as LED substrates (particularly C-plane orientation), optical windows and lenses for high-durability applications, substrates for GaN epitaxial growth, and carriers for semiconductor and MEMS devices requiring high mechanical and chemical stability.

    What crystal orientations do you offer?

    Our sapphire substrates are available in multiple crystal orientations, including C Side, R Side, M Side, and A Side, to meet different application requirements.

    What are the standard surface and edge specifications?

    We offer both Double Side Polished and Single Side Polished surface options. The edges are finished with a standard 45° chamfer to prevent chipping and improve handling safety.

    What are the typical values for Warp and TTV?

    Our precision manufacturing processes ensure excellent flatness, with Warp values kept at ≤10μm and Total Thickness Variation (TTV) limited to ≤3μm across all standard sizes.

    How does the thickness vary with the substrate diameter?

    Standard thicknesses scale with diameter to maintain structural integrity: 50.8mm substrates are 430 ± 25μm thick, 100mm substrates are 650 ± 25μm thick, while 150mm and 200mm substrates are 1300 ± 25μm thick.

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