Oxide wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
Our 8-inch Silicon Dummy Wafers provide critical support for advanced process nodes and 200mm manufacturing. These wafers are indispensable for new equipment qualification, process chamber recovery, and acting as carrier wafers in thin-wafer handling, where superior surface integrity and mechanical strength are paramount. A substantial portion of this product line, especially for the most demanding applications, is manufactured and quality-assured at our Japanese partner facility, bringing you renowned precision and reliability. Their exceptional flatness and low particle levels make them suitable for leading-edge 200mm fabs and sensitive processes like epitaxy.
12inch 300mm Thermal Oxide Silicon Wafer
The 12-inch Silicon Oxide Wafer represents the highest standard for large-diameter substrate processing. Designed for advanced semiconductor and photonics manufacturing, this Thermal Oxide Wafer ensures excellent oxide uniformity, low defect density, and superior dielectric reliability across a 300mm platform. Its stable Oxidized Silicon Substrate supports next-generation devices requiring tight process control and high-yield performance. Lead time: approximately 2 to 4 weeks.
8inch 200mm SiO2 Silicon Oxide Wafer
The 8-inch Silicon Oxide Wafer is engineered for production environments requiring superior film quality and consistency. Utilizing a controlled thermal oxidation process, this Silicon Dioxide Wafer provides uniform oxide growth across the entire wafer surface. Ideal for CMOS, photonic, and MEMS integration, it supports complex device layering and precise dielectric interfaces. All wafers undergo rigorous inspection to guarantee reliability. Lead time: approximately 2 to 4 weeks.
6inch 150mm Thermal Oxide Silicon Wafer
Our 6-inch Silicon Oxide Wafer delivers superior film uniformity and surface flatness, meeting the demanding requirements of advanced process development. The precisely grown SiO₂ Wafer provides excellent insulation and chemical stability, making it ideal for integrated circuit prototyping, dielectric studies, and nanofabrication. Manufactured under strict quality control, each wafer ensures reliable performance and consistent oxidation quality. Typically ships within 2–4 weeks.
4inch SiO2 Wafer 100mm Silicon Oxide Wafer
The 4-inch Silicon Oxide Wafer is an ideal choice for research laboratories and small-scale semiconductor production. Featuring a uniform layer of SiO₂ grown through a high-quality thermal oxidation process, this wafer provides exceptional surface smoothness and electrical insulation. Suitable for device prototyping, MEMS fabrication, and optical experiments, our Thermal Oxide Wafer ensures high purity and reproducible results. Lead time: approximately 2 to 4 weeks.
High Quality 300mm 200mm 8-12inch Oxide Wafer Selection Silicon Wafe
Product Introduction:
FSM can provide Oxide wafers in various sizes from 8 inches to 12 inches, with our own factory to ensure the stable quality and controllable delivery time. We also have various testing equipment to provide parameter testing services as needed.