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Optimizing Chamber Heat Refractive Balances and Deposition Uniformity of Thermal Oxide Wafers via High-Durability Substrates

Optimizing Chamber Heat Refractive Balances and Deposition Uniformity of Thermal Oxide Wafers via High-Durability Substrates
Managing Film Stress and Thermal Gradient Micro-Warping in High-Temperature Oxide Wafer and SiN Wafer Growth Loops

Managing Film Stress and Thermal Gradient Micro-Warping in High-Temperature Oxide Wafer and SiN Wafer Growth Loops
Suppressing Thermal Gradient Slip and Lattice Dislocation in High-Temperature Chemical Vapor Deposition Epitaxy Loops

Suppressing Thermal Gradient Slip and Lattice Dislocation in High-Temperature Chemical Vapor Deposition Epitaxy Loops
Mitigating Focal Plane Deviations and Nanoscale Overlay Distortion Induced by Dielectric Film Stress in Advanced Lithography Tracks

Mitigating Focal Plane Deviations and Nanoscale Overlay Distortion Induced by Dielectric Film Stress in Advanced Lithography Tracks
Optimizing Particle Trapping Efficiency and Gas-Phase Defect Suppression in High-Density Plasma Chamber Seasoning Formats

Optimizing Particle Trapping Efficiency and Gas-Phase Defect Suppression in High-Density Plasma Chamber Seasoning Formats
Characterizing Interfacial Friction Uniformity and Sub-Surface Shear Stress During Chemical Mechanical Planarization for Advanced Nodes

Characterizing Interfacial Friction Uniformity and Sub-Surface Shear Stress During Chemical Mechanical Planarization for Advanced Nodes
Analyzing Focal Plane Deviations and Nanoscale Alignment Distortion Induced by Dielectric Film Stress in DUV/EUV Lithography Tracks

Analyzing Focal Plane Deviations and Nanoscale Alignment Distortion Induced by Dielectric Film Stress in DUV/EUV Lithography Tracks
Suppressing Thermal Gradient Slip Lines and Micro-Void Nucleation in High-Temperature Vertical Diffusion and Epitaxial Growth Furnaces

Suppressing Thermal Gradient Slip Lines and Micro-Void Nucleation in High-Temperature Vertical Diffusion and Epitaxial Growth Furnaces
Mitigating Interfacial Parasitic Capacitance and Substrate Cross-Talk in High-Frequency RF and GaN-on-Silicon Device Integration

Mitigating Interfacial Parasitic Capacitance and Substrate Cross-Talk in High-Frequency RF and GaN-on-Silicon Device Integration
Characterizing Slurry Abrasion Uniformity and Sub-Surface Micro-Scratch Defects in Nano-Scale Chemical Mechanical Planarization Loops

Characterizing Slurry Abrasion Uniformity and Sub-Surface Micro-Scratch Defects in Nano-Scale Chemical Mechanical Planarization Loops

KOD&FSM Invites You to SEMICON JAPAN 2025

2025-11-12

SEMICON Japan 2025 will be held from December 17 to 19 at Tokyo Big Sight, which will become the center of the global semiconductor industry during this period. The event will bring together over 1,200 exhibitors and feature a series of exciting seminars and forums covering topics ranging from advanced packaging and chips to artificial intelligence, robotics, and photonics.

KOD and FSM have been invited to participate in this grand event. We look forward to welcoming you at Booth E4632 with our full enthusiasm and professional services!

Booth Information

Exhibition Date: DEC 17-19, 2025

Exhibition Venue: Tokyo Big Sight（東京ビッグサイト）

Booth No.: E4632（East Hall 4,1F）

【Booth (E4632) Schematic】

【Exhibition Hall Map】