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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
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China Sapphire Wafers Suppliers - High-Quality Factory Products from 50.8mm to 200mm with C/R/M/A Orientation

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Product Introduction:

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Discover our high-quality sapphire wafers, expertly manufactured in China. Available in diameters ranging from 50.8mm (2) to 200mm (8) and thickness options from 430μm to 1300μm, our wafers come in C, R, M, and A crystal orientations. Each wafer features meticulously polished surfaces—either double-side or single-side—ensuring exceptional surface quality with an Ra of ≤0.3nm, minimal warp of ≤10μm, and tight TTV control of ≤3μm. As a leading supplier and factory of sapphire wafers, we provide reliable substrates ideal for various optoelectronic and optical applications.

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    Product Detail

    Applications

    • LED substrates (particularly C-plane orientation)
    • Optical windows and lenses for high-durability applications
    • Substrates for GaN epitaxial growth
    • Semiconductor and MEMS device carriers requiring high mechanical and chemical stability

    Parameter Specifications

    DIAMETER 50.8 ± 0.1MM 100 ± 0.1MM 150 ± 0.1MM 200 ± 0.1MM
    Thickness 430 ± 25μm 650 ± 25μm 1300 ± 25μm 1300 ± 25μm
    Ra ≤0.3nm ≤0.3nm ≤0.3nm ≤0.3nm
    Warp ≤10μm ≤10μm ≤10μm ≤10μm
    TTV ≤3μm ≤3μm ≤3μm ≤3μm
    Crystal Orientation C Side / R Side / M Side / A Side
    Surface Double Side Polished / Single Side Polished
    Edge 45° chamfer

    Frequently Asked Questions

    What are the primary applications for these substrates?

    These substrates are widely used for LED substrates (especially C-plane orientation), optical windows and lenses for high-durability applications, substrates for GaN epitaxial growth, and semiconductor/MEMS device carriers that require high mechanical and chemical stability.

    What crystal orientations are available for the substrates?

    We offer multiple crystal orientations to suit different specifications, including C Side, R Side, M Side, and A Side.

    What are the standard diameter and thickness specifications?

    Our standard diameters range from 50.8 ± 0.1mm (thickness 430 ± 25μm), 100 ± 0.1mm (thickness 650 ± 25μm), to 150 ± 0.1mm and 200 ± 0.1mm (both with a thickness of 1300 ± 25μm).

    What is the surface roughness (Ra) of these substrates?

    All of our standard substrate sizes feature an extremely smooth surface finish with a surface roughness (Ra) of ≤0.3nm.

    What are the Warp and TTV tolerances?

    We maintain high precision and flatness standards, with Warp specifications kept at ≤10μm and Total Thickness Variation (TTV) at ≤3μm.

    How are the edges of the substrates finished?

    The substrates are designed with a standard 45° chamfer edge for improved structural integrity and safe handling.

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