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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
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China Sapphire Wafers Suppliers - High-Quality 50.8mm to 200mm Factory Products with C/R/M/A Orientation

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Product Introduction:

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Discover our premium sapphire wafers, available from trusted suppliers in China. We offer a variety of diameters ranging from 50.8mm (2) to 200mm (8), with thickness options between 430μm and 1300μm based on wafer size. Our sapphire wafers are produced in a state-of-the-art factory and come with C, R, M, and A crystal orientations. Choose from double-side or single-side polished surfaces that ensure outstanding surface quality (Ra ≤0.3nm), minimal warp (≤10μm), and precise TTV control (≤3μm). These exceptional characteristics make our wafers an ideal substrate for a wide range of optoelectronic and optical applications.

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    Product Detail

    Applications

    • LED substrates (particularly C-plane orientation)
    • Optical windows and lenses for high-durability applications
    • Substrates for GaN epitaxial growth
    • Semiconductor and MEMS device carriers requiring high mechanical and chemical stability

    Parameter Specifications

    DIAMETER 50.8 ± 0.1MM 100 ± 0.1MM 150 ± 0.1MM 200 ± 0.1MM
    Thickness 430 ± 25μm 650 ± 25μm 1300 ± 25μm 1300 ± 25μm
    Ra ≤0.3nm ≤0.3nm ≤0.3nm ≤0.3nm
    Warp ≤10μm ≤10μm ≤10μm ≤10μm
    TTV ≤3μm ≤3μm ≤3μm ≤3μm
    Crystal Orientation C Side / R Side / M Side / A Side
    Surface Double Side Polished / Single Side Polished
    Edge 45° chamfer

    Frequently Asked Questions

    Q: What are the primary applications for these substrates?
    These substrates are widely used for LED substrates (especially C-plane orientation), optical windows and lenses in high-durability environments, GaN epitaxial growth, and as carriers for semiconductor and MEMS devices that demand high mechanical and chemical stability.
    Q: What crystal orientations are available for these wafers?
    We offer multiple crystal orientations to suit different application requirements, including C Side, R Side, M Side, and A Side orientations.
    Q: What are the standard surface roughness (Ra) and TTV specifications?
    The substrates feature an ultra-smooth surface with an Ra of ≤0.3nm, a Warp of ≤10μm, and a Total Thickness Variation (TTV) of ≤3μm to ensure optimal performance for epitaxial growth and semiconductor processing.
    Q: Can I choose between single-side and double-side polishing?
    Yes, we provide customization options for surface finishes. The substrates can be supplied as either Single Side Polished (SSP) or Double Side Polished (DSP) depending on your project needs.
    Q: What dimensions and thicknesses do you offer?
    Our standard diameters include 50.8 ± 0.1mm (thickness 430 ± 25μm), 100 ± 0.1mm (thickness 650 ± 25μm), 150 ± 0.1mm (thickness 1300 ± 25μm), and 200 ± 0.1mm (thickness 1300 ± 25μm). All options come with a standard 45° chamfer edge.

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