8inch 200mm SiO2 Silicon Oxide Wafer

The 8-inch Silicon Oxide Wafer is engineered for production environments requiring superior film quality and consistency. Utilizing a controlled thermal oxidation process, this Silicon Dioxide Wafer provides uniform oxide growth across the entire wafer surface. Ideal for CMOS, photonic, and MEMS integration, it supports complex device layering and precise dielectric interfaces. All wafers undergo rigorous inspection to guarantee reliability. Lead time: approximately 2 to 4 weeks.

Product Detail

Core Highlights

· Uniform oxidation across 200mm SiO2 Wafer.
· Optimized for CMOS and photonics device fabrication.
· Low defect density and high insulation performance.
· Stable Oxidized Silicon Substrate for multilayer processes.
· Typically ships within 2–4 weeks.

Technical Specifications
· Diameter: 8 inch (200 mm)
· Oxide Thickness: 50–20000A
· Oxide Type: Dry/Wet Thermal Oxide
· Substrate: Prime Grade Silicon
· Surface: Double Side Polished (DSP) optional
· Resistivity: Specified upon order

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