0102030405
8-Inch Silicon Oxide Wafer - High Quality SiO2 from China Suppliers & Factory for CMOS, Photonics, and MEMS Integration
Core Highlights
- Uniform oxidation across 200mm SiO2 Wafer.
- Optimized for CMOS and photonics device fabrication.
- Low defect density and high insulation performance.
- Stable Oxidized Silicon Substrate for multilayer processes.
- Typically ships within 2–4 weeks.
Technical Specifications
Diameter
8 inch (200 mm)
Oxide Thickness
50–20000A
Oxide Type
Dry/Wet Thermal Oxide
Substrate
Prime Grade Silicon
Surface
Double Side Polished (DSP) optional
Resistivity
Specified upon order
Frequently Asked Questions
Q: What is the diameter of this SiO2 Wafer?
The wafer has a standard diameter of 8 inches (200 mm).
Q: What range of oxide thickness do you offer?
We offer oxide thicknesses ranging from 50 to 20000A, using Prime Grade Silicon as the substrate.
Q: What types of thermal oxidation are available?
We provide both Dry and Wet Thermal Oxide processes to achieve uniform oxidation across the wafer.
Q: Are these wafers suitable for CMOS fabrication?
Yes, they are optimized for both CMOS and photonics device fabrication, offering a stable oxidized silicon substrate for multilayer processes.
Q: Can I request a double-side polished surface?
Yes, a Double Side Polished (DSP) surface is optional and can be specified upon ordering.
Q: What is the typical lead time for shipping?
Orders typically ship within 2 to 4 weeks, with resistivity values specified upon order.


