8-Inch Silicon Oxide Wafer from China Suppliers | High-Quality SiO2 Wafer from Factory for CMOS and MEMS Applications
Core Highlights
- Uniform oxidation across 200mm SiO2 Wafer.
- Optimized for CMOS and photonics device fabrication.
- Low defect density and high insulation performance.
- Stable Oxidized Silicon Substrate for multilayer processes.
- Typically ships within 2–4 weeks.
Technical Specifications
| Diameter | 8 inch (200 mm) |
| Oxide Thickness | 50–20000A |
| Oxide Type | Dry/Wet Thermal Oxide |
| Substrate | Prime Grade Silicon |
| Surface | Double Side Polished (DSP) optional |
| Resistivity | Specified upon order |
Frequently Asked Questions
What is the standard lead time for the 200mm SiO2 Wafer?
Our standard shipping lead time is typically within 2 to 4 weeks depending on the order configuration and volume.
Can I choose between Dry and Wet Thermal Oxidation?
Yes, we offer both Dry and Wet Thermal Oxide processes. Dry oxidation is ideal for thinner, high-quality gate oxides, while wet oxidation is optimized for thicker layers up to 20000A.
Are these wafers suitable for CMOS and photonics applications?
Absolutely. The uniform oxidation, low defect density, and excellent insulation performance make them ideal for advanced CMOS and photonics device fabrication.
Is Double Side Polished (DSP) available for these substrates?
Yes, Double Side Polished (DSP) is available as an option. Our standard substrate is Prime Grade Silicon, ensuring high stability for multilayer processes.
How is the resistivity of the silicon substrate determined?
The resistivity is specified upon order to match your exact device design and application requirements.