0102030405
8-inch Silicon Oxide Wafer from China Suppliers - High-Quality SiO2 Wafer for Advanced Device Fabrication Factory
Core Highlights
Uniform oxidation across 200mm SiO2 Wafer.
Optimized for CMOS and photonics device fabrication.
Low defect density and high insulation performance.
Stable Oxidized Silicon Substrate for multilayer processes.
Typically ships within 2–4 weeks.
Technical Specifications
Diameter
8 inch (200 mm)
Oxide Thickness
50–20000A
Oxide Type
Dry/Wet Thermal Oxide
Substrate
Prime Grade Silicon
Surface
Double Side Polished (DSP) optional
Resistivity
Specified upon order
Frequently Asked Questions
Q: What is the lead time for standard orders?
Our standard shipping timeline is typically within 2 to 4 weeks, depending on the specifications and order volume.
Q: What is the difference between Dry and Wet Thermal Oxide?
Dry thermal oxidation provides high-density, high-quality oxides with excellent electrical properties, suitable for thin gate oxides. Wet thermal oxidation is faster and ideal for growing thicker oxide layers used for masking or isolation.
Q: Can I customize the oxide thickness for the 200mm wafer?
Yes, we offer customizable thermal oxide thicknesses ranging from 50Å up to 20000Å to fit your specific device fabrication needs.
Q: Do you offer Double Side Polished (DSP) wafers?
Yes, Double Side Polished (DSP) silicon substrates are optional and can be specified during the configuration of your order.
Q: What grade of silicon substrate is used?
We strictly use Prime Grade Silicon substrates to ensure low defect density, optimal flatness, and superior performance for CMOS and photonics processes.
Q: How is the wafer resistivity determined?
The electrical resistivity of the silicon substrate is specified upon order to ensure it matches your exact application requirements.