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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
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8-Inch 200mm SSP/DSP Dummy Grade Silicon Wafers from China Suppliers - High-Quality Factory Manufacturing

Our 8-inch Silicon Dummy Wafers are essential for supporting advanced process nodes and 200mm manufacturing in China. As a leading supplier, we offer these wafers that are critical for new equipment qualification, process chamber recovery, and thin-wafer handling, where exceptional surface integrity and mechanical strength are vital. A significant portion of our product line is produced and quality-assured at our state-of-the-art factory in Japan, ensuring renowned precision and reliability. With outstanding flatness and low particle levels, our Silicon Dummy Wafers are perfectly suited for cutting-edge 200mm fabs and sensitive processes like epitaxy, making them a top choice for manufacturers seeking premium quality
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    Product Detail

    Core Highlights

    Japanese Quality Assurance: Key products are sourced from our Japanese partner facility, ensuring top-tier performance for critical tools.

    Advanced Application Support: Essential for carrier wafer applications and new tool qualification in 200mm fabs.

    Superior Surface Properties: Excellent flatness and low particle counts for use in sensitive processes.

    Dedicated Processing: Each order undergoes a dedicated QA and fulfillment cycle to meet the higher standards of advanced fabs.

    Parameter Specifications
    Grow Method Type Dopant Resistivity RRV Orientation Slice Orientation Diameter Tolerance Primary Flat Location Primary Flat Length Thickness TTV Warp Bow Front Side Backside
    CZ P Boron 0-100 Ω·CM 12% <100> ±1° 200±0.2mm <110>±1° / 725±25um ≦30um ≦40um ≦40um Polished Etched
    Frequently Asked Questions
    Where are these wafers manufactured and how is quality assured?
    Key products are sourced from our Japanese partner facility. This ensures top-tier performance for critical tools, with each order undergoing a dedicated QA and fulfillment cycle to meet the rigorous standards of advanced fabs.
    What are the primary applications for these 200mm wafers?
    These wafers are essential for carrier wafer applications and new tool qualification processes within 200mm fabrication facilities.
    What are the growth method, type, and dopant specifications?
    The wafers are manufactured using the CZ (Czochralski) growth method, are P-type, and use Boron as the dopant.
    What are the surface finishes of the front and back sides?
    The front side is Polished to ensure superior surface properties, excellent flatness, and low particle counts, while the backside is Etched.
    What are the key physical dimensions and tolerances?
    The wafers have a diameter of 200±0.2mm and a thickness of 725±25um. The Total Thickness Variation (TTV) is ≦30um, while both Warp and Bow are kept within ≦40um.
    What is the resistivity range and orientation of the silicon?
    The resistivity is specified at 0-100 Ω·CM. The crystal orientation is <100> ±1°, and the primary flat location is <110> ±1°.

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