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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
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4inch SiO2 Wafer 100mm Silicon Oxide Wafer 3.jpg
4inch SiO2 Wafer 100mm Silicon Oxide Wafer 2.jpg

8-Inch 200mm SiO2 Silicon Oxide Wafer - High-Quality Product from Trusted China Suppliers and Factory

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The 8-inch Silicon Oxide Wafer is specially designed for production environments that demand exceptional film quality and consistency. Manufactured in our state-of-the-art factory in China, this Silicon Dioxide Wafer utilizes a controlled thermal oxidation process to ensure uniform oxide growth across the entire wafer surface. It is perfect for applications in CMOS, photonics, and MEMS integration, allowing for complex device layering and precise dielectric interfaces. As trusted suppliers, we conduct rigorous inspections on all wafers to guarantee their reliability and performance. Lead time for delivery is approximately 2 to 4 weeks.

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    Product Detail

    Core Highlights

    Uniform oxidation across 200mm SiO2 Wafer.

    Optimized for CMOS and photonics device fabrication.

    Low defect density and high insulation performance.

    Stable Oxidized Silicon Substrate for multilayer processes.

    Typically ships within 2–4 weeks.

    Technical Specifications

    Diameter

    8 inch (200 mm)

    Oxide Thickness

    50–20000A

    Oxide Type

    Dry/Wet Thermal Oxide

    Substrate

    Prime Grade Silicon

    Surface

    Double Side Polished (DSP) optional

    Resistivity

    Specified upon order

    Frequently Asked Questions

    Q: What is the typical lead time for the 200mm SiO2 Wafers?

    Our standard shipping time for these oxidized silicon substrates is typically 2 to 4 weeks depending on the order specifications.

    Q: What ranges of oxide thickness do you offer?

    We offer thermal oxide thicknesses ranging from 50Å to 20000Å, customized to your specific research or production requirements.

    Q: What is the difference between Dry and Wet Thermal Oxide?

    Dry thermal oxidation provides high-density, high-quality oxides ideal for thin gate oxides. Wet thermal oxidation grows faster and is optimized for thicker oxide layers used in masking or insulation.

    Q: Are these wafers suitable for CMOS device fabrication?

    Yes, they are specifically optimized for CMOS and photonics device fabrication due to their low defect density and high insulation performance.

    Q: Can I order Double Side Polished (DSP) wafers?

    Yes, Double Side Polished (DSP) surfaces are optional and can be specified during the ordering process to meet your multilayer process demands.

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