0102030405
8-Inch 200mm Silicon Oxide Wafer - High-Quality Wafer Suppliers and Factory in China
Core Highlights
Uniform oxidation across 200mm SiO2 Wafer.
Optimized for CMOS and photonics device fabrication.
Low defect density and high insulation performance.
Stable Oxidized Silicon Substrate for multilayer processes.
Typically ships within 2–4 weeks.
Technical Specifications
| Diameter | 8 inch (200 mm) |
| Oxide Thickness | 50–20000A |
| Oxide Type | Dry/Wet Thermal Oxide |
| Substrate | Prime Grade Silicon |
| Surface | Double Side Polished (DSP) optional |
| Resistivity | Specified upon order |
Frequently Asked Questions (FAQ)
1. What is the typical lead time for 200mm SiO2 Wafers?
Our typical shipping window is within 2 to 4 weeks depending on the customized specifications of your order.
2. Can I choose between Dry and Wet Thermal Oxidation?
Yes, we offer both Dry and Wet Thermal Oxide processes to fit your specific device fabrication requirements.
3. What ranges of oxide thickness do you provide?
We support custom oxide thicknesses ranging from thin layers of 50Å up to thick layers of 20000Å.
4. Is the Double Side Polished (DSP) option available?
Yes, Double Side Polished (DSP) substrate configuration is optional and can be specified upon placing your order.
5. What grade of silicon is used as the base substrate?
We strictly use high-quality Prime Grade Silicon to ensure low defect density and superior insulation performance.
6. How is the resistivity of the wafer determined?
Resistivity is tailored to your needs and will be specified and confirmed upon your custom order.

