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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
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8-Inch 200mm Dummy Silicon Wafers from Reliable China Suppliers - High-Quality Factory Production

Introducing our 8-inch Silicon Dummy Wafers, expertly crafted to support advanced process nodes and 200mm manufacturing. These essential wafers are designed for various applications, including new equipment qualification, process chamber recovery, and as carrier wafers for thin-wafer handling, where exceptional surface integrity and mechanical strength are crucial. A significant portion of our product line is produced and quality-assured in our partner factory in Japan, ensuring you receive the highest standards of precision and reliability. With outstanding flatness and low particle levels, our wafers are ideal for cutting-edge 200mm fabs and sensitive processes like epitaxy. As a leading provider in China, we pride ourselves on being a trusted supplier for your semiconductor needs
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    Product Detail

    Core Highlights

    Japanese Quality Assurance

    Key products are sourced from our Japanese partner facility, ensuring top-tier performance for critical tools.

    Advanced Application Support

    Essential for carrier wafer applications and new tool qualification in 200mm fabs.

    Superior Surface Properties

    Excellent flatness and low particle counts for use in sensitive processes.

    Dedicated Processing

    Each order undergoes a dedicated QA and fulfillment cycle to meet the higher standards of advanced fabs.

    Parameter Specifications

    Grow Method Type Dopant Resistivity RRV Orientation Slice Orientation Diameter Tolerance Primary Flat Location Primary Flat Length Thickness TTV Warp Bow Front Side Backside
    CZ P Boron 0-100 Ω·CM 12% <100> ±1° 200±0.2mm <110>±1° / 725±25um ≦30um ≦40um ≦40um Polished Etched

    Frequently Asked Questions

    What growth method is used for these wafers?
    These wafers are manufactured using the CZ (Czochralski) growth method, ensuring reliable material consistency.
    What are the primary applications for these 200mm wafers?
    They are specifically designed and essential for carrier wafer applications and new tool qualification in 200mm fabrication facilities.
    Where are these wafers sourced and processed?
    Key products are sourced from our Japanese partner facility, backed by a dedicated quality assurance and fulfillment cycle to meet advanced fab standards.
    What are the surface finishes of the front and back sides?
    The wafers feature a Polished front side and an Etched backside, optimized for sensitive processing environments.
    What are the resistivity and thickness specifications?
    The wafers are P-type (Boron doped) with a resistivity range of 0-100 Ω·CM and a standard thickness of 725±25um.
    What are the flatness tolerances (TTV, Warp, Bow)?
    To guarantee superior flatness, the wafers maintain a Total Thickness Variation (TTV) of ≦30um, Warp of ≦40um, and Bow of ≦40um.

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