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6inch 150mm Thermal Oxide Silicon Wafer

Our 6-inch Silicon Oxide Wafer delivers superior film uniformity and surface flatness, meeting the demanding requirements of advanced process development. The precisely grown SiO₂ Wafer provides excellent insulation and chemical stability, making it ideal for integrated circuit prototyping, dielectric studies, and nanofabrication. Manufactured under strict quality control, each wafer ensures reliable performance and consistent oxidation quality. Typically ships within 2–4 weeks.

    Core Highlights

    · Precision-grown Thermal Oxide Wafer for advanced process applications.
    · Excellent mechanical strength and oxide adhesion.
    · Low particle contamination and surface roughness.
    · Suitable for IC, MEMS, and sensor fabrication.
    · Lead time: approximately 2 to 4 weeks.

    Technical Specifications
    · Diameter: 6 inch (150 mm)
    · Oxide Thickness: 50–20000A
    · Oxide Type: Dry or Wet Thermal Oxidation
    · Substrate: Prime or Test Grade Silicon Wafer
    · Surface: Mirror-polished, single or both sides
    · Resistivity: Customizable

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