0102030405
6inch 150mm Thermal Oxide Silicon Wafer
Core Highlights
· Precision-grown Thermal Oxide Wafer for advanced process applications.
· Excellent mechanical strength and oxide adhesion.
· Low particle contamination and surface roughness.
· Suitable for IC, MEMS, and sensor fabrication.
· Lead time: approximately 2 to 4 weeks.
Technical Specifications
· Diameter: 6 inch (150 mm)
· Oxide Thickness: 50–20000A
· Oxide Type: Dry or Wet Thermal Oxidation
· Substrate: Prime or Test Grade Silicon Wafer
· Surface: Mirror-polished, single or both sides
· Resistivity: Customizable
