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Featured Products
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
8inch 200mm SSP/DSP Test Grade silicon wafer

8inch 200mm SSP/DSP Test Grade silicon wafer
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6inch 150mm SSP Silicon Dummy Wafer

Engineered for durability and consistency, our 6-inch Silicon Dummy Wafers are cornerstone consumables for high-volume manufacturing environments. They are extensively deployed for CMP dummy runs, furnace tube fills, and continuous equipment monitoring in mainstream production fabs. Their robust design ensures reliable performance in demanding applications, helping to stabilize equipment, prevent process drift, and protect your overall yield. 

Benefiting from our flexible, dual-source supply chain, a significant volume is supported by our high-capacity production lines in China to guarantee steady availability, with premium grades linked to our Japanese facility for enhanced performance.

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    Product Detail

    Core Highlights

    · Production-Proven Reliability: Built for endurance in high-volume CMP and diffusion furnace processes.
    · Stable Supply Chain: Dual-source manufacturing from our China and Japan sites ensures a consistent and reliable supply.
    · Optimized for Manufacturing: Delivered within a predictable lead time to keep your production schedule on track.
    · Yield Protection: Plays a vital role in equipment monitoring and process stabilization, directly contributing to yield preservation.

    Parameter Specifications

    Grow Method Type Dopant Resistivity RRV Orientation Slice Orientation Diameter Tolerance Primary Flat Location Primary Flat Length Thickness TTV Warp Bow Front Side Backside
    CZ P/N Boron 0-100 Ω·CM 12% <100> ±1° 150±0.3mm <110>±1° 57.5±2.5mm 675±25um ≦30um ≦30um ≦30um Polished Etched

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