Products Categories

Products

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

12inch 300mm DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

6inch 150mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer

12inch 300mm Thermal Oxide Silicon Wafer

8inch 200mm SiO2 Silicon Oxide Wafer

6inch 150mm Thermal Oxide Silicon Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer

12inch 300mm DSP Test Grade silicon wafer

0102030405

6-Inch Silicon Dummy Wafers from China Suppliers - High-Quality Factory Production for Consistent CMP Runs and Equipment Monitoring

Engineered for durability and consistency, our 6-inch Silicon Dummy Wafers are essential consumables for high-volume manufacturing environments. These wafers are widely utilized for CMP dummy runs, furnace tube fills, and continuous equipment monitoring in mainstream production fabs. With a robust design, they ensure reliable performance in demanding applications, helping stabilize equipment, prevent process drift, and protect your overall yield.

Our strong partnership with suppliers and a flexible dual-source supply chain enable us to support significant volumes from our high-capacity factory in China, ensuring steady availability. Premium grades are linked to our Japanese facility for enhanced performance, making our silicon dummy wafers the ideal choice for your manufacturing needs.

Product Detail

Core Highlights

Production-Proven Reliability

Built for endurance in high-volume CMP and diffusion furnace processes.

Stable Supply Chain

Dual-source manufacturing from our China and Japan sites ensures a consistent and reliable supply.

Optimized for Manufacturing

Delivered within a predictable lead time to keep your production schedule on track.

Yield Protection

Plays a vital role in equipment monitoring and process stabilization, directly contributing to yield preservation.

Parameter Specifications

Grow Method	Type	Dopant	Resistivity	RRV	Orientation	Slice Orientation	Diameter Tolerance	Primary Flat Location	Primary Flat Length	Thickness	TTV	Warp	Bow	Front Side	Backside
CZ	P/N	Boron	0-100 Ω·CM	12%	<100>	±1°	150±0.3mm	<110>±1°	57.5±2.5mm	675±25um	≦30um	≦30um	≦30um	Polished	Etched

Frequently Asked Questions

What is the growth method used for these wafers?

These wafers are manufactured using the Czochralski (CZ) growth method, which is the industry standard for producing high-quality monocrystalline silicon.

Which semiconductor processes are these wafers optimized for?

They are specifically designed and optimized for high-volume Chemical Mechanical Planarization (CMP) and diffusion furnace processes.

How does the dual-source manufacturing benefit my supply chain?

By producing these wafers in both our China and Japan facilities, we mitigate supply chain risks and guarantee a consistent, stable, and timely delivery schedule.

What are the surface specifications for the front and back sides?

The wafers feature a polished front side for optimal processing and an etched backside to meet standard equipment and handling specifications.

What is the typical thickness and flatness variation of these wafers?

The nominal thickness is 675±25µm, with Total Thickness Variation (TTV), Warp, and Bow values all strictly controlled to ≦30µm to ensure process stability.