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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
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6-Inch Silicon Dummy Wafers from China Suppliers - High-Quality Factory Production for CMP and Equipment Monitoring

Engineered for durability and consistency, our premium quality 6-inch Silicon Dummy Wafers are essential consumables in high-volume manufacturing environments. These wafers are widely utilized for CMP dummy runs, furnace tube fills, and continuous equipment monitoring across mainstream production fabs. With a robust design, they deliver reliable performance in demanding applications, helping to stabilize equipment, prevent process drift, and protect your overall yield, Our flexible dual-source supply chain ensures steady availability of these wafers, with a significant volume produced by our state-of-the-art factory in China. We also offer premium grades sourced from our advanced facilities in Japan, enhancing performance and meeting your manufacturing needs efficiently. Partnering with trusted suppliers, we guarantee that our Silicon Dummy Wafers meet the highest standards of quality and reliability
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    Product Detail

    Core Highlights

    Production-Proven Reliability

    Built for endurance in high-volume CMP and diffusion furnace processes.

    Stable Supply Chain

    Dual-source manufacturing from our China and Japan sites ensures a consistent and reliable supply.

    Optimized for Manufacturing

    Delivered within a predictable lead time to keep your production schedule on track.

    Yield Protection

    Plays a vital role in equipment monitoring and process stabilization, directly contributing to yield preservation.

    Parameter Specifications

    Grow Method Type Dopant Resistivity RRV Orientation Slice Orientation Diameter Tolerance Primary Flat Location Primary Flat Length Thickness TTV Warp Bow Front Side Backside
    CZ P/N Boron 0-100 Ω·CM 12% <100> ±1° 150±0.3mm <110>±1° 57.5±2.5mm 675±25um ≦30um ≦30um ≦30um Polished Etched

    Frequently Asked Questions

    What growth method is used for these wafers?

    These wafers are manufactured using the Czochralski (CZ) growth method, which is the standard technique for producing high-quality monocrystalline silicon.

    In which manufacturing processes are these wafers typically used?

    They are specifically optimized for chemical mechanical planarization (CMP) and diffusion furnace processes, providing essential support for equipment monitoring and process stabilization.

    How does the dual-source manufacturing model benefit my supply chain?

    By producing these wafers in both our China and Japan facilities, we mitigate supply chain risks and ensure a stable, redundant supply with highly predictable delivery lead times.

    What are the electrical specifications, including dopant and resistivity?

    The wafers are Boron-doped, P/N type, with a resistivity range of 0-100 Ω·CM and a Radial Resistivity Variation (RRV) of 12%.

    What are the physical dimensions and surface finishes of the wafer?

    The wafers have a nominal diameter of 150±0.3mm (6 inches), a thickness of 675±25um, and feature a polished front side and an etched backside. Dimensional tolerances for TTV, Warp, and Bow are all kept within ≦30um.

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