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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
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6-inch Silicon Dummy Wafers from China Suppliers - Durable Factory Solution for CMP and Equipment Monitoring

Introducing our expertly engineered **6-inch Silicon Dummy Wafers**, essential consumables designed for durability and consistency in high-volume manufacturing environments. These wafers are ideal for **CMP dummy runs**, **furnace tube fills**, and continuous **equipment monitoring** in mainstream production fabs. With a robust design, they ensure reliable performance in demanding applications, helping stabilize equipment, prevent process drift, and enhance your overall yield, Our commitment to quality is backed by a flexible, dual-source supply chain. A significant volume of our **dummy wafers** is produced in our high-capacity **factory** in **China**, ensuring consistent availability. Additionally, premium grades are sourced from our **suppliers** in Japan, providing enhanced performance to meet your manufacturing needs. Trust in our **China**-based production capabilities for optimal results in your operations
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    Product Detail

    Core Highlights
    • Production-Proven Reliability Built for endurance in high-volume CMP and diffusion furnace processes.
    • Stable Supply Chain Dual-source manufacturing from our China and Japan sites ensures a consistent and reliable supply.
    • Optimized for Manufacturing Delivered within a predictable lead time to keep your production schedule on track.
    • Yield Protection Plays a vital role in equipment monitoring and process stabilization, directly contributing to yield preservation.
    Parameter Specifications
    Grow Method Type Dopant Resistivity RRV Orientation Slice Orientation Diameter Tolerance Primary Flat Location Primary Flat Length Thickness TTV Warp Bow Front Side Backside
    CZ P/N Boron 0-100 Ω·CM 12% <100> ±1° 150±0.3mm <110>±1° 57.5±2.5mm 675±25um <=30um <=30um <=30um Polished Etched
    Frequently Asked Questions
    What are the primary applications for these silicon wafers?
    These silicon wafers are specifically engineered for high-volume Chemical Mechanical Planarization (CMP) and diffusion furnace processes, offering production-proven reliability.
    How is the supply chain stability guaranteed for these wafers?
    We maintain a stable supply chain utilizing dual-source manufacturing from our production sites in both China and Japan, ensuring consistent availability.
    What growth method and dopant are used for these wafers?
    These wafers are manufactured using the Czochralski (CZ) growth method and are doped with Boron to achieve P/N type electrical properties.
    What are the physical dimensions and tolerances of the wafers?
    The wafers have a diameter of 150±0.3mm, a thickness of 675±25um, and a primary flat length of 57.5±2.5mm.
    What are the surface specifications for the front and back sides?
    The wafers feature a Polished finish on the front side and an Etched finish on the backside to meet standard processing requirements.
    What are the flatness parameters (TTV, Warp, Bow) for these wafers?
    The Total Thickness Variation (TTV), Warp, and Bow are all highly controlled and specified at <=30um to ensure optimal tool compatibility and yield.

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