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6-Inch 150mm Thermal Oxide Silicon Wafer - High Quality from China Suppliers and Factory for Advanced Applications

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Our 6-inch Silicon Oxide Wafer is expertly crafted in our state-of-the-art factory in China, ensuring exceptional film uniformity and surface flatness that meet the rigorous demands of advanced process development. This high-quality SiO₂ Wafer, produced by leading suppliers in the industry, offers outstanding insulation and chemical stability, making it perfect for integrated circuit prototyping, dielectric studies, and nanofabrication applications. Manufactured under stringent quality control measures, each wafer guarantees reliable performance and consistent oxidation quality. Ships typically within 2–4 weeks, making it an efficient choice for your project needs.

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    Core Highlights

    Precision-grown Thermal Oxide Wafer for advanced process applications.

    Excellent mechanical strength and oxide adhesion.

    Low particle contamination and surface roughness.

    Suitable for IC, MEMS, and sensor fabrication.

    Lead time: approximately 2 to 4 weeks.

    Technical Specifications

    Diameter
    6 inch (150 mm)
    Oxide Thickness
    50–20000A
    Oxide Type
    Dry or Wet Thermal Oxidation
    Substrate
    Prime or Test Grade Silicon Wafer
    Surface
    Mirror-polished, single or both sides
    Resistivity
    Customizable

    Frequently Asked Questions (FAQ)

    What is a Thermal Oxide Wafer?

    A Thermal Oxide Wafer is a silicon wafer with a high-purity silicon dioxide (SiO2) layer grown on its surface using a thermal oxidation process, providing excellent mechanical strength and electrical isolation.

    What is the difference between dry and wet thermal oxidation?

    Dry oxidation uses pure oxygen to grow thin, high-density, and high-quality oxide layers. Wet oxidation uses water vapor, allowing faster growth of thicker oxide layers but with slightly lower density.

    What range of oxide thickness can be customized?

    We offer custom oxide thicknesses ranging from 50Å to 20000Å (Angstroms) to meet specific application requirements.

    What are these wafers primarily used for?

    They are ideal for integrated circuits (IC), microelectromechanical systems (MEMS), sensor fabrication, and other high-precision process applications.

    What is the typical lead time for orders?

    The standard lead time is approximately 2 to 4 weeks depending on the configuration and volume of the order.

    Can I customize the resistivity of the silicon substrate?

    Yes, we support customizable resistivity for the silicon substrate (Prime or Test Grade) to match your specific process needs.

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