6-Inch 150mm Thermal Oxide Silicon Wafer - High Quality from China Suppliers and Factory for Advanced Applications
Core Highlights
Precision-grown Thermal Oxide Wafer for advanced process applications.
Excellent mechanical strength and oxide adhesion.
Low particle contamination and surface roughness.
Suitable for IC, MEMS, and sensor fabrication.
Lead time: approximately 2 to 4 weeks.
Technical Specifications
Frequently Asked Questions (FAQ)
A Thermal Oxide Wafer is a silicon wafer with a high-purity silicon dioxide (SiO2) layer grown on its surface using a thermal oxidation process, providing excellent mechanical strength and electrical isolation.
Dry oxidation uses pure oxygen to grow thin, high-density, and high-quality oxide layers. Wet oxidation uses water vapor, allowing faster growth of thicker oxide layers but with slightly lower density.
We offer custom oxide thicknesses ranging from 50Å to 20000Å (Angstroms) to meet specific application requirements.
They are ideal for integrated circuits (IC), microelectromechanical systems (MEMS), sensor fabrication, and other high-precision process applications.
The standard lead time is approximately 2 to 4 weeks depending on the configuration and volume of the order.
Yes, we support customizable resistivity for the silicon substrate (Prime or Test Grade) to match your specific process needs.
