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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

12inch 300mm DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

6inch 150mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer

12inch 300mm Thermal Oxide Silicon Wafer

8inch 200mm SiO2 Silicon Oxide Wafer

6inch 150mm Thermal Oxide Silicon Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer

12inch 300mm DSP Test Grade silicon wafer

0102030405

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6-Inch 150mm Thermal Oxide Silicon Wafer from Reliable China Suppliers | High-Quality Factory Production

Introducing our premium 6-inch Silicon Oxide Wafer, specially designed to meet the rigorous standards of advanced process development. Sourced from top China suppliers, our meticulously crafted SiO₂ Wafer guarantees outstanding film uniformity and surface flatness, crucial for applications in integrated circuit prototyping, dielectric studies, and cutting-edge nanofabrication. Produced in our state-of-the-art factory, each wafer undergoes comprehensive quality control to ensure exceptional insulation and chemical stability, providing reliable performance and consistent oxidation quality. Order today and expect shipping within 2–4 weeks.

Product Detail

Core Highlights

Precision-grown Thermal Oxide Wafer for advanced process applications.

Excellent mechanical strength and oxide adhesion.

Low particle contamination and surface roughness.

Suitable for IC, MEMS, and sensor fabrication.

Lead time: approximately 2 to 4 weeks.

Technical Specifications

Diameter 6 inch (150 mm)

Oxide Thickness 50–20000A

Oxide Type Dry or Wet Thermal Oxidation

Substrate Prime or Test Grade Silicon Wafer

Surface Mirror-polished, single or both sides

Resistivity Customizable

Frequently Asked Questions

What is the difference between dry and wet thermal oxidation?

Dry thermal oxidation uses pure oxygen gas to grow thin, high-density oxide layers with excellent electrical properties. Wet thermal oxidation utilizes water vapor, resulting in a faster growth rate suitable for producing thicker oxide layers.

What oxide thicknesses are available for these wafers?

We support a wide range of oxide thicknesses from 50Å (Angstroms) up to 20,000Å, allowing for precise customization based on your specific application and process requirements.

Can the resistivity of the silicon substrate be customized?

Yes, the resistivity of both Prime and Test grade silicon substrates is fully customizable to meet the electrical specifications of your semiconductor or MEMS designs.

What are the typical applications for these wafers?

These precision thermal oxide wafers are ideally suited for Integrated Circuit (IC) fabrication, Micro-Electro-Mechanical Systems (MEMS), and sensor manufacturing, serving as high-quality insulating layers or diffusion masks.

What is the expected lead time for delivery?

The standard lead time for our 6-inch thermal oxide silicon wafers is approximately 2 to 4 weeks, depending on the specific configuration and batch size required.