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Featured Products
Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
0102030405
4inch SiO2 Wafer 100mm Silicon Oxide Wafer 3.jpg
4inch SiO2 Wafer 100mm Silicon Oxide Wafer 2.jpg
4inch SiO2 Wafer 100mm Silicon Oxide Wafer 1.jpg

6-Inch 150mm Thermal Oxide Silicon Wafer from China Suppliers - High-Quality Factory Manufactured SiO₂ Wafer

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Introducing our 6-inch Silicon Oxide Wafer, a premier product from trusted China suppliers and manufacturers. This wafer is engineered for exceptional film uniformity and surface flatness, crucial for advanced process development in the semiconductor industry. Our meticulously produced SiO₂ Wafer offers outstanding insulation and chemical stability, making it an ideal choice for integrated circuit prototyping, dielectric studies, and cutting-edge nanofabrication. Rigorously manufactured in our factory under stringent quality control measures, each wafer guarantees reliable performance and consistent oxidation quality. Enjoy prompt shipping typically within 2–4 weeks.

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    Product Detail

    Core Highlights

    • Precision-grown Thermal Oxide Wafer for advanced process applications.

    • Excellent mechanical strength and oxide adhesion.

    • Low particle contamination and surface roughness.

    • Suitable for IC, MEMS, and sensor fabrication.

    • Lead time: approximately 2 to 4 weeks.

    Technical Specifications

    Diameter
    6 inch (150 mm)
    Oxide Thickness
    50–20000Å
    Oxide Type
    Dry or Wet Thermal Oxidation
    Substrate
    Prime or Test Grade Silicon Wafer
    Surface
    Mirror-polished, single or both sides
    Resistivity
    Customizable

    Frequently Asked Questions

    What diameters are available for the Thermal Oxide Wafers?

    The standard diameter size is 6 inches (150 mm), built upon high-quality Prime or Test Grade silicon substrates.

    What ranges of oxide thickness can be customized?

    We offer thermal oxide layers within the thickness range of 50Å to 20000Å, grown via dry or wet thermal oxidation processes.

    Can the resistivity of the substrate be customized?

    Yes, the resistivity of the silicon wafer substrate is fully customizable to meet your specific electrical and process demands.

    What are the primary applications of these wafers?

    These wafers feature low particle contamination and high mechanical strength, making them ideal for IC, MEMS, and sensor fabrication.

    What is the standard lead time for shipping?

    The typical lead time for precision-grown thermal oxide wafers is approximately 2 to 4 weeks.

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