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Featured Products
Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
0102030405
4inch SiO2 Wafer 100mm Silicon Oxide Wafer 3.jpg
4inch SiO2 Wafer 100mm Silicon Oxide Wafer 2.jpg
4inch SiO2 Wafer 100mm Silicon Oxide Wafer 1.jpg

6-Inch 150mm Thermal Oxide Silicon Wafer from China Suppliers - High-Quality Factory Direct Solution

Discover our high-quality 6-inch Silicon Oxide Wafer, a top choice among global suppliers. This wafer is engineered to ensure superior film uniformity and exceptional surface flatness, meeting the rigorous demands of advanced process development. As a leading factory in China, we offer a precisely grown SiO₂ Wafer that boasts excellent insulation properties and outstanding chemical stability. This makes it perfect for applications in integrated circuit prototyping, dielectric studies, and nanofabrication. Each wafer is manufactured under stringent quality control measures to guarantee reliable performance and consistent oxidation quality. Orders typically ship within 2–4 weeks, providing you with a dependable solution for your technological needs
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    Product Detail

    Core Highlights

    • Precision-grown Thermal Oxide Wafer for advanced process applications.
    • Excellent mechanical strength and oxide adhesion.
    • Low particle contamination and surface roughness.
    • Suitable for IC, MEMS, and sensor fabrication.
    • Lead time: approximately 2 to 4 weeks.

    Technical Specifications

    Diameter
    6 inch (150 mm)
    Oxide Thickness
    50–20000A
    Oxide Type
    Dry or Wet Thermal Oxidation
    Substrate
    Prime or Test Grade Silicon Wafer
    Surface
    Mirror-polished, single or both sides
    Resistivity
    Customizable

    Frequently Asked Questions

    What are the main applications for these Thermal Oxide Wafers?
    These wafers are precision-grown for advanced process applications, making them highly suitable for Integrated Circuit (IC), MEMS, and sensor fabrication.
    What options do you offer for oxide thickness and oxidation type?
    We provide oxide thicknesses ranging from 50 to 20000A. Customers can choose between Dry or Wet Thermal Oxidation processes depending on their technical requirements.
    Can I customize the resistivity of the silicon substrate?
    Yes, the resistivity of our Prime or Test Grade Silicon Wafer substrates is fully customizable to meet your specific project needs.
    What surface finishes are available for the 6-inch wafers?
    Our wafers feature a mirror-polished surface finish, which can be configured for either single-sided or double-sided polishing.
    What is the typical lead time for ordering these wafers?
    The estimated lead time for manufacturing and delivery is approximately 2 to 4 weeks, ensuring low particle contamination and high mechanical strength.

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