Products Categories

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

12inch 300mm DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

6inch 150mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer

12inch 300mm Thermal Oxide Silicon Wafer

8inch 200mm SiO2 Silicon Oxide Wafer

6inch 150mm Thermal Oxide Silicon Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer

12inch 300mm DSP Test Grade silicon wafer

0102030405

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6-Inch 150mm Thermal Oxide Silicon Wafer - China Suppliers & Factory for Superior Film Uniformity and Insulation

Our 6-inch Silicon Oxide Wafer is meticulously crafted to provide outstanding film uniformity and surface flatness, catering to the high standards of advanced process development. As a top choice among China suppliers, this precisely engineered SiO₂ Wafer offers exceptional insulation and chemical stability, making it perfect for integrated circuit prototyping, dielectric studies, and nanofabrication applications. Produced in our state-of-the-art factory under rigorous quality control measures, each wafer guarantees reliable performance and consistent oxidation quality. Typically ships within 2–4 weeks.

Product Detail

Core Highlights

Precision-grown Thermal Oxide Wafer for advanced process applications.
Excellent mechanical strength and oxide adhesion.
Low particle contamination and surface roughness.
Suitable for IC, MEMS, and sensor fabrication.
Lead time: approximately 2 to 4 weeks.

Technical Specifications

Diameter	6 inch (150 mm)
Oxide Thickness	50–20000A
Oxide Type	Dry or Wet Thermal Oxidation
Substrate	Prime or Test Grade Silicon Wafer
Surface	Mirror-polished, single or both sides
Resistivity	Customizable

Frequently Asked Questions (FAQ)

What is the typical lead time for these Thermal Oxide Wafers?

The lead time for our precision-grown Thermal Oxide Wafers is approximately 2 to 4 weeks, depending on the customization requirements.

What oxide thicknesses and types do you offer?

We offer oxide thicknesses ranging from 50 to 20000A. The oxide layer can be grown using either Dry or Wet Thermal Oxidation processes to suit your application.

What are the primary applications for these wafers?

These wafers are designed for advanced process applications, making them highly suitable for Integrated Circuit (IC), MEMS, and sensor fabrication.

Can I choose the substrate grade and surface polish?

Yes, we provide both Prime and Test Grade Silicon Wafer substrates. The surface can be mirror-polished on either a single side or both sides.

Is the resistivity of the wafers customizable?

Yes, the resistivity of our Thermal Oxide Wafers is fully customizable to meet your specific project requirements.