4 inch

The 4-inch Silicon Oxide Wafer is an ideal choice for research laboratories and small-scale semiconductor production. Featuring a uniform layer of SiO₂ grown through a high-quality thermal oxidation process, this wafer provides exceptional surface smoothness and electrical insulation. Suitable for device prototyping, MEMS fabrication, and optical experiments, our Thermal Oxide Wafer ensures high purity and reproducible results. Lead time: approximately 2 to 4 weeks.