12inch

The 12-inch Silicon Oxide Wafer represents the highest standard for large-diameter substrate processing. Designed for advanced semiconductor and photonics manufacturing, this Thermal Oxide Wafer ensures excellent oxide uniformity, low defect density, and superior dielectric reliability across a 300mm platform. Its stable Oxidized Silicon Substrate supports next-generation devices requiring tight process control and high-yield performance. Lead time: approximately 2 to 4 weeks.