12inch 300mm Thermal Oxide Silicon Wafer

The 12-inch Silicon Oxide Wafer represents the highest standard for large-diameter substrate processing. Designed for advanced semiconductor and photonics manufacturing, this Thermal Oxide Wafer ensures excellent oxide uniformity, low defect density, and superior dielectric reliability across a 300mm platform. Its stable Oxidized Silicon Substrate supports next-generation devices requiring tight process control and high-yield performance. Lead time: approximately 2 to 4 weeks.

Product Detail

Core Highlights

· Large-diameter SiO2 Wafer with excellent oxide integrity.
· Ideal for high-volume semiconductor and photonics production.
· Tight thickness tolerance and ultra-smooth surface.
· Reliable Silicon Dioxide Wafer for advanced multilayer structures.
· Typically ships within 2–4 weeks.

Technical Specifications
· Diameter: 12 inch (300 mm)
· Oxide Thickness: 50–20000A
· Oxide Type: Thermal Oxidation (Dry/Wet)
· Substrate: Prime Grade Silicon, CZ or FZ
· Surface: Ultra-flat, double-side polished
· Resistivity: Available upon request

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