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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

12inch 300mm DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

6inch 150mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer

12inch 300mm Thermal Oxide Silicon Wafer

8inch 200mm SiO2 Silicon Oxide Wafer

6inch 150mm Thermal Oxide Silicon Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer

12inch 300mm DSP Test Grade silicon wafer

0102030405

12inch 300mm DSP Dummy Grade Silicon Wafer from China Factory - Top Suppliers for Advanced Semiconductor Manufacturing

Introducing our premium 12-inch Silicon Dummy Wafers, expertly crafted for the most advanced 300mm manufacturing facilities globally. Sourced primarily from our state-of-the-art factory in Japan, these wafers play a vital role in cutting-edge process development, safeguarding multi-million-dollar EUV lithography tools, and ensuring consistent performance in high-volume production, Designed to meet the highest standards for nanoscale surface topology and featuring minimal metallic contamination, our Silicon Dummy Wafers are the preferred choice for critical applications including plasma chamber cleaning and film deposition calibration. As leading suppliers in the industry, we are committed to delivering exceptional quality and performance, making our wafers indispensable for manufacturers seeking reliability and excellence in their operations, especially in the rapidly evolving landscape of China

Product Detail

Core Highlights

Premium Japanese Sourcing

Primarily manufactured in our Japanese facility, guaranteeing elite material quality and consistency.

For Leading-Edge Technology

Essential for supporting EUV lithography and the development of next-generation semiconductor devices.

Mission-Critical Performance

Engineered for the most demanding tasks in 300mm fabs, including plasma cleaning and use as benchmark wafers.

Elite Fulfillment Program

All orders are managed under a premium fulfillment program to ensure integrity and timely delivery for critical fab operations.

Parameter Specifications

Grow Method	Type	Dopant	Resistivity	RRV	Orientation	Slice Orientation	Diameter Tolerance	Primary Flat Location	Primary Flat Length	Thickness	TTV	Warp	Bow	Front Side	Backside
CZ	P	Boron	0-100 Ω·CM	12%	<100>	±1°	300±0.2mm	<110>±1°	/	775±25um	≦30um	≦40um	≦40um	Polished	Polished

Frequently Asked Questions

Where are these silicon wafers sourced and manufactured?

These silicon wafers are primarily manufactured in our specialized Japanese facility, which ensures elite material quality, consistency, and strict adherence to semiconductor manufacturing standards.

What are the primary applications for these 300mm wafers?

They are designed for leading-edge technology nodes, specifically supporting EUV lithography and next-generation device development. They are also ideal for mission-critical tasks in 300mm fabs, such as plasma cleaning and acting as benchmark wafers.

What are the key dopant and resistivity specifications?

The wafers are P-type, doped with Boron, and feature a resistivity range of 0-100 Ω·CM. They are grown using the Czochralski (CZ) method.

What are the dimensional tolerances for thickness and diameter?

These wafers have a nominal diameter of 300mm with a tolerance of ±0.2mm, and a thickness of 775µm with a tolerance of ±25µm.

What surface finish is applied to the front and back sides?

Both the front side and the backside of the wafer are fully polished to meet the precise requirements of advanced semiconductor processes.

How is shipping and handling managed for critical fab operations?

All orders are processed under our Elite Fulfillment Program, which is specifically designed to guarantee product integrity, minimize contamination risks, and ensure timely delivery for critical fab operations.