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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
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4inch SiO2 Wafer 100mm Silicon Oxide Wafer 3.jpg
4inch SiO2 Wafer 100mm Silicon Oxide Wafer 2.jpg

12-Inch 300mm Thermal Oxide Silicon Wafer - Reliable Source from China Suppliers and Factory

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The 12-inch Silicon Oxide Wafer is the pinnacle of large-diameter substrate processing, making it an essential choice for advanced semiconductor and photonics manufacturing. This high-quality Thermal Oxide Wafer from trusted China suppliers offers outstanding oxide uniformity, low defect density, and superior dielectric reliability on a 300mm platform. Our stable Oxidized Silicon Substrate caters to next-generation devices that require precise process control and exceptional yield performance. Sourced directly from our state-of-the-art factory, lead time is approximately 2 to 4 weeks.

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    Product Detail

    Core Highlights
    • Large-diameter SiO2 Wafer with excellent oxide integrity.
    • Ideal for high-volume semiconductor and photonics production.
    • Tight thickness tolerance and ultra-smooth surface.
    • Reliable Silicon Dioxide Wafer for advanced multilayer structures.
    • Typically ships within 2–4 weeks.
    Technical Specifications
    Diameter 12 inch (300 mm)
    Oxide Thickness 50–20000A
    Oxide Type Thermal Oxidation (Dry/Wet)
    Substrate Prime Grade Silicon, CZ or FZ
    Surface Ultra-flat, double-side polished
    Resistivity Available upon request
    Frequently Asked Questions
    What is the standard lead time for the 12-inch SiO2 Wafer?
    Our 12-inch SiO2 Wafers typically ship within 2 to 4 weeks from the date of order confirmation.
    What oxide thickness range do you offer?
    We support a wide range of oxide thicknesses, from 50A up to 20000A, to meet various application requirements.
    What type of oxidation processes are used?
    We utilize high-quality Thermal Oxidation methods, offering both Dry and Wet oxidation depending on your specifications.
    What are the substrate specifications of these wafers?
    The wafers are built on Prime Grade Silicon substrates, prepared using either the Czochralski (CZ) or Float Zone (FZ) growth methods.
    Are these wafers polished on both sides?
    Yes, the wafers feature an ultra-flat, double-side polished surface, ensuring optimal performance for multilayer structures.
    Is specific resistivity available for ordering?
    Yes, customized resistivity options for the substrate are available upon request. Please contact us to specify your requirements.

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