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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

12inch 300mm DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

6inch 150mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer

12inch 300mm Thermal Oxide Silicon Wafer

8inch 200mm SiO2 Silicon Oxide Wafer

6inch 150mm Thermal Oxide Silicon Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer

12inch 300mm DSP Test Grade silicon wafer

0102030405

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12-inch 300mm Thermal Oxide Silicon Wafer - Premium Quality from China Suppliers and Factory

The 12-inch Silicon Oxide Wafer sets the benchmark for large-diameter substrate processing in advanced semiconductor and photonics manufacturing. Manufactured in China, this Thermal Oxide Wafer guarantees excellent oxide uniformity, low defect density, and outstanding dielectric reliability on a 300mm platform. Our reliable Oxidized Silicon Substrate is perfect for next-generation devices that demand precise process control and high-yield performance. Partner with the leading suppliers in the industry and benefit from our efficient factory production, with a lead time of approximately 2 to 4 weeks.

Product Detail

Core Highlights

Large-diameter SiO2 Wafer with excellent oxide integrity.
Ideal for high-volume semiconductor and photonics production.
Tight thickness tolerance and ultra-smooth surface.
Reliable Silicon Dioxide Wafer for advanced multilayer structures.
Typically ships within 2–4 weeks.

Technical Specifications

Diameter 12 inch (300 mm)

Oxide Thickness 50–20000A

Oxide Type Thermal Oxidation (Dry/Wet)

Substrate Prime Grade Silicon, CZ or FZ

Surface Ultra-flat, double-side polished

Resistivity Available upon request

Frequently Asked Questions (FAQ)

Q1: What are the main applications of these 12-inch SiO2 Wafers?

These wafers are highly optimized for high-volume semiconductor manufacturing, advanced photonics production, and the fabrication of complex multilayer structures requiring superior oxide integrity.

Q2: What is the typical lead time for custom orders?

Standard custom configurations and high-volume orders typically ship within 2 to 4 weeks, depending on the specific customization requirements.

Q3: Can I choose between CZ and FZ silicon substrates?

Yes, we provide Prime Grade Silicon substrates grown using either the Czochralski (CZ) or Float Zone (FZ) method to suit your specific electrical and thermal needs.

Q4: What oxide thickness options do you support?

We offer high-quality thermal oxidation (both dry and wet oxidation processes) with precise oxide thicknesses ranging from 50Å up to 20000Å.

Q5: Is specific resistivity tuning available?

Yes, substrate resistivity can be customized and is available upon request. Please specify your target resistivity range when placing an inquiry.

Q6: What surface quality can be expected?

Our 12-inch SiO2 wafers feature an ultra-flat, double-side polished (DSP) surface finish, ensuring extremely tight thickness tolerance and minimal roughness.