0102030405
12-Inch 300mm Thermal Oxide Silicon Wafer | High-Quality China Suppliers & Factory for Semiconductor Manufacturing
Core Highlights
- Large-diameter SiO2 Wafer with excellent oxide integrity.
- Ideal for high-volume semiconductor and photonics production.
- Tight thickness tolerance and ultra-smooth surface.
- Reliable Silicon Dioxide Wafer for advanced multilayer structures.
- Typically ships within 2–4 weeks.
Technical Specifications
Diameter
12 inch (300 mm)
Oxide Thickness
50–20000A
Oxide Type
Thermal Oxidation (Dry/Wet)
Substrate
Prime Grade Silicon, CZ or FZ
Surface
Ultra-flat, double-side polished
Resistivity
Available upon request
Frequently Asked Questions
What is the standard diameter of these SiO2 Wafers?
These Silicon Dioxide (SiO2) Wafers feature a standard diameter of 12 inches (300 mm), making them ideal for high-volume semiconductor and photonics production.
What range of oxide thickness do you offer?
We provide oxide layers ranging from 50 to 20000A, grown via Thermal Oxidation (both Dry and Wet methods) to ensure tight thickness tolerance and excellent oxide integrity.
What substrate options and surface finishes are available?
The substrate consists of Prime Grade Silicon (CZ or FZ growth methods) with an ultra-flat, double-side polished surface to support advanced multilayer structures.
Can I request custom resistivity values?
Yes, specific resistivity configurations are available upon request. Please contact us with your detailed requirements.
What is the typical shipping time frame for orders?
Our standard SiO2 Wafers typically ship within 2 to 4 weeks from order confirmation.

