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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

12inch 300mm DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

6inch 150mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer

12inch 300mm Thermal Oxide Silicon Wafer

8inch 200mm SiO2 Silicon Oxide Wafer

6inch 150mm Thermal Oxide Silicon Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer

12inch 300mm DSP Test Grade silicon wafer

0102030405

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12-Inch 300mm Thermal Oxide Silicon Wafer from China Suppliers | High-Quality Factory Manufacturing

The 12-inch Silicon Oxide Wafer sets the benchmark for large-diameter substrate processing, catering to advanced semiconductor and photonics manufacturing needs. This premium Thermal Oxide Wafer, produced by leading China suppliers, guarantees outstanding oxide uniformity, low defect density, and exceptional dielectric reliability on a 300mm platform. Our stable Oxidized Silicon Substrate is ideal for next-generation devices that demand precise process control and high-yield performance. With a manufacturing process taking place in our state-of-the-art factory, expect a lead time of approximately 2 to 4 weeks.

Product Detail

Core Highlights

Large-diameter SiO2 Wafer with excellent oxide integrity.

Ideal for high-volume semiconductor and photonics production.

Tight thickness tolerance and ultra-smooth surface.

Reliable Silicon Dioxide Wafer for advanced multilayer structures.

Typically ships within 2–4 weeks.

Technical Specifications

Diameter

12 inch (300 mm)

Oxide Thickness

50–20000A

Oxide Type

Thermal Oxidation (Dry/Wet)

Substrate

Prime Grade Silicon, CZ or FZ

Surface

Ultra-flat, double-side polished

Resistivity

Available upon request

Frequently Asked Questions

What is the lead time for the 12-inch SiO2 Wafers?

Typically, our 12-inch Silicon Dioxide (SiO2) Wafers ship within 2 to 4 weeks depending on specific thickness and customization requirements.

What oxide thicknesses can you provide?

We offer thermal oxide thicknesses ranging from 50A to 20000A. We can accommodate dry or wet thermal oxidation processes based on your application.

What are the substrate specifications?

The substrate utilizes Prime Grade Silicon, grown via Czochralski (CZ) or Float Zone (FZ) methods, with an ultra-flat, double-side polished surface.

Is custom resistivity available?

Yes, specific resistivity configurations are available upon request to meet your precise semiconductor and photonics production needs.

What applications are these SiO2 Wafers suitable for?

These wafers feature excellent oxide integrity, making them ideal for high-volume semiconductor manufacturing, photonics production, and advanced multilayer structures.