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Featured Products
Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP
12inch 300mm DSP Dummy Grade Silicon Wafer

12inch 300mm DSP Dummy Grade Silicon Wafer
8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer
6inch 150mm SSP Silicon Dummy Wafer

6inch 150mm SSP Silicon Dummy Wafer
4inch 100mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer
12inch 300mm Thermal Oxide Silicon Wafer

12inch 300mm Thermal Oxide Silicon Wafer
8inch 200mm SiO2 Silicon Oxide Wafer

8inch 200mm SiO2 Silicon Oxide Wafer
6inch 150mm Thermal Oxide Silicon Wafer

6inch 150mm Thermal Oxide Silicon Wafer
4inch SiO2 Wafer 100mm Silicon Oxide Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer
12inch 300mm DSP Test Grade silicon wafer

12inch 300mm DSP Test Grade silicon wafer
0102030405
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4inch SiO2 Wafer 100mm Silicon Oxide Wafer 3.jpg
4inch SiO2 Wafer 100mm Silicon Oxide Wafer 2.jpg

12-inch 300mm Thermal Oxide Silicon Wafer from China Suppliers - High-Quality Factory Manufacturing for Semiconductors

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The 12-inch Silicon Oxide Wafer sets the benchmark for large-diameter substrate processing, ideal for advanced semiconductor and photonics manufacturing. Offered by leading Suppliers in China, this Thermal Oxide Wafer guarantees exceptional oxide uniformity, minimal defect density, and outstanding dielectric reliability within a 300mm platform. The stable Oxidized Silicon Substrate is engineered to meet the demands of next-generation devices that require precise process control and high yield performance. Discover premium quality from our Factory with a lead time of approximately 2 to 4 weeks.

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    Product Detail

    Core Highlights

    • Large-diameter SiO2 Wafer with excellent oxide integrity.
    • Ideal for high-volume semiconductor and photonics production.
    • Tight thickness tolerance and ultra-smooth surface.
    • Reliable Silicon Dioxide Wafer for advanced multilayer structures.
    • Typically ships within 2–4 weeks.

    Technical Specifications

    Diameter
    12 inch (300 mm)
    Oxide Thickness
    50–20000A
    Oxide Type
    Thermal Oxidation (Dry/Wet)
    Substrate
    Prime Grade Silicon, CZ or FZ
    Surface
    Ultra-flat, double-side polished
    Resistivity
    Available upon request

    Frequently Asked Questions

    What is the standard diameter and surface finish of these SiO2 Wafers?
    These Silicon Dioxide Wafers feature a 12-inch (300 mm) diameter and come with an ultra-flat, double-side polished surface finish to ensure premium substrate quality.
    What oxide thicknesses and oxidation types do you offer?
    We offer a wide oxide thickness range from 50 to 20000A. The oxide layer is grown using Thermal Oxidation, available in both Dry and Wet processes depending on your application requirements.
    What is the substrate grade and crystal growth method?
    The base substrate consists of Prime Grade Silicon, grown via either CZ (Czochralski) or FZ (Float Zone) methods, ensuring excellent oxide integrity for advanced multilayer structures.
    Can I order wafers with specific resistivity values?
    Yes, specific resistivity configurations are available upon request. Please share your detailed requirements with us when placing an inquiry.
    What is the typical lead time and shipping schedule?
    Orders typically ship within 2 to 4 weeks, making them ideal for high-volume semiconductor and photonics production schedules.

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