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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

12inch 300mm DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

6inch 150mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer

12inch 300mm Thermal Oxide Silicon Wafer

8inch 200mm SiO2 Silicon Oxide Wafer

6inch 150mm Thermal Oxide Silicon Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer

12inch 300mm DSP Test Grade silicon wafer

0102030405

12-Inch 300mm DSP Dummy Grade Silicon Wafers from China Suppliers - Premium Quality Factory Production

Introducing our top-tier 12-inch Silicon Dummy Wafers, meticulously crafted for the most advanced 300mm manufacturing facilities worldwide. Sourced primarily from our leading-edge factory in China, these wafers are essential for cutting-edge process development and play a pivotal role in safeguarding multi-million-dollar EUV lithography machines. Designed to ensure maximum stability during high-volume production, our wafers adhere to stringent specifications for nanoscale surface topology and minimal metallic contamination. As preferred consumables among suppliers, they are ideal for mission-critical applications such as plasma chamber cleaning and film deposition calibration. Choose our Silicon Dummy Wafers for unparalleled quality and performance in your manufacturing processes

Product Detail

Core Highlights

Premium Japanese Sourcing

Primarily manufactured in our Japanese facility, guaranteeing elite material quality and consistency.

For Leading-Edge Technology

Essential for supporting EUV lithography and the development of next-generation semiconductor devices.

Mission-Critical Performance

Engineered for the most demanding tasks in 300mm fabs, including plasma cleaning and use as benchmark wafers.

Elite Fulfillment Program

All orders are managed under a premium fulfillment program to ensure integrity and timely delivery for critical fab operations.

Parameter Specifications

Grow Method	Type	Dopant	Resistivity	RRV	Orientation	Slice Orientation	Diameter Tolerance	Primary Flat Location	Primary Flat Length	Thickness	TTV	Warp	Bow	Front Side	Backside
CZ	P	Boron	0-100 Ω·CM	12%	<100>	±1°	300±0.2mm	<110>±1°	/	775±25um	≦30um	≦40um	≦40um	Polished	Polished

Frequently Asked Questions

What applications are these 300mm silicon wafers designed for?

These wafers are specifically engineered for advanced semiconductor manufacturing, including support for EUV lithography, plasma cleaning, and service as benchmark wafers in 300mm fabrication facilities.

Where are these silicon wafers manufactured?

The wafers are primarily manufactured in our Japanese facility, ensuring the highest standards of material purity, elite quality control, and production consistency.

What are the main electrical and structural specifications?

They feature Czochralski (CZ) growth method, P-type Boron dopant, a resistivity range of 0-100 Ω·CM, <100> orientation, and a standard thickness of 775±25µm with double-side polished finish.

What is the surface finish specification for both sides of the wafer?

Both the front side and the backside of these semiconductor wafers feature a double-sided polished finish to meet critical fab processing demands.

How is order delivery managed for fab operations?

All wafer orders are processed under an Elite Fulfillment Program, guaranteeing careful handling, product integrity, and reliable delivery schedules suited for mission-critical operations.