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Sapphire Wafers — 50.8mm to 200mm, C/R/M/A Orientation, DSP/SSP

12inch 300mm DSP Dummy Grade Silicon Wafer

8inch 200mm SSP/DSP Dummy Grade Silicon Wafer

6inch 150mm SSP Silicon Dummy Wafer

4inch 100mm SSP Silicon Dummy Wafer

12inch 300mm Thermal Oxide Silicon Wafer

8inch 200mm SiO2 Silicon Oxide Wafer

6inch 150mm Thermal Oxide Silicon Wafer

4inch SiO2 Wafer 100mm Silicon Oxide Wafer

12inch 300mm DSP Test Grade silicon wafer

0102030405

12-Inch 300mm DSP Dummy Grade Silicon Wafers from China Suppliers and Factory for Advanced Manufacturing

Introducing our premium 12-inch Silicon Dummy Wafers, crafted to meet the highest standards of purity and performance, specifically designed for the most advanced 300mm manufacturing facilities worldwide. These wafers are primarily sourced from our state-of-the-art factory in Japan, ensuring exceptional quality and reliability. As leading suppliers in this industry, we recognize the crucial role these wafers play in cutting-edge process development, safeguarding sophisticated multi-million-dollar EUV lithography tools, and ensuring consistent stability in high-volume production. Our products boast stringent specifications for nanoscale surface topology and minimal metallic contamination, making them the preferred choice for mission-critical applications such as plasma chamber cleaning and film deposition calibration. Trust our Silicon Dummy Wafers to elevate your manufacturing processes in China and beyond

Product Detail

Core Highlights

Premium Japanese Sourcing

Primarily manufactured in our Japanese facility, guaranteeing elite material quality and consistency.

For Leading-Edge Technology

Essential for supporting EUV lithography and the development of next-generation semiconductor devices.

Mission-Critical Performance

Engineered for the most demanding tasks in 300mm fabs, including plasma cleaning and use as benchmark wafers.

Elite Fulfillment Program

All orders are managed under a premium fulfillment program to ensure integrity and timely delivery for critical fab operations.

Parameter Specifications

Grow Method	Type	Dopant	Resistivity	RRV	Orientation	Slice Orientation	Diameter Tolerance	Primary Flat Location	Primary Flat Length	Thickness	TTV	Warp	Bow	Front Side	Backside
CZ	P	Boron	0-100 Ω·CM	12%	<100>	±1°	300±0.2mm	<110>±1°	/	775±25um	≦30um	≦40um	≦40um	Polished	Polished

Frequently Asked Questions

Where are these silicon wafers manufactured?

These wafers are primarily sourced and manufactured in our dedicated Japanese facility, ensuring the highest standards of material quality, consistency, and precision controls.

Are these wafers suitable for advanced EUV lithography?

Yes. They are specifically engineered to support EUV lithography processes and are essential for developing next-generation semiconductor devices.

What are the key dimensional specifications of these 300mm wafers?

The wafers feature a nominal diameter of 300±0.2mm, a thickness of 775±25um, and maintain a Total Thickness Variation (TTV) of ≦30um, with both warp and bow kept within ≦40um.

What type of dopant and resistivity range do they offer?

These are P-type wafers doped with Boron, offering a resistivity range of 0-100 Ω·CM and a Radial Resistivity Variation (RRV) of 12%.

What is the surface finish on the front and back sides?

Both the front side and the backside of the wafers are fully polished to meet the stringent requirements of cleanroom fab operations.

How is the delivery integrity of these wafers managed?

All orders are processed under our Elite Fulfillment Program, which is designed to guarantee product integrity, minimize contamination risk, and ensure timely delivery for critical fab environments.